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GP1200FSM18 Datasheet(PDF) 6 Page - Dynex Semiconductor

Part # GP1200FSM18
Description  Hi-Reliability Single Switch IGBT Module
PDF  9 Pages
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP1200FSM18 Datasheet(HTML) 6 Page - Dynex Semiconductor

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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Forward bias safe operating area
Fig. 10 Transient thermal impedance
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Foward voltage, VF - (V)
Tj = 125˚C
Tj = 25˚C
1
10
100
1000
10000
1
10
100
1000
10000
Collector emitter voltage, Vce - (V)
IC max (DC)
tp = 1ms
tp = 100µs
tp = 50µs
0
500
1000
1500
2000
2500
3000
0
400
800
1200
1600
2000
Collector-emitter voltage, Vce - (V)
Tcase = 125˚C
Vge = ±15V
Rg(off) = 2.2Ω
0.1
1
10
100
0.001
0.01
0.1
1
10
Pulse width, tp - (s)
Transistor
Diode



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