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STL100N1VH5 Datasheet(PDF) 5 Page - STMicroelectronics |
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STL100N1VH5 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 13 page ![]() STL100N1VH5 Electrical characteristics Doc ID 018550 Rev 1 5/13 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD=6 V, ID= 12.5 A, RG=4.7 Ω, VGS=4.5 V Figure 13 - 14.4 31.6 50 16 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current - 25 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 100 A VSD (2) 2. Pulsed: pulse duration= 300 µs, duty cycle 1.5% Forward on voltage ISD = 25 A, VGS=0 - 1.1 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 25 A, di/dt = 100 A/µs, VDD=10 V, Tj=150 °C - 49 54 2.2 ns nC A |
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