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SMS6001 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SMS6001 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  Elektronische Bauelemente SMS6001 440mA, 60V, RDS(ON) 2 N-Ch Enhancement Mode Power MOSFET 27-Jan-2014 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. * = Date Code RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SMS6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage ESD Rating: 2KV HBM APPLICATION DC-DC converter circuit Load Switch DEVICE MARKING: PACKAGE INFORMATION Package MPQ Leader Size SOT-23 3K 7’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Rating Parameter Symbol 10S Steady State Unit Drain – Source Voltage VDS 60 V Gate – Source Voltage VGS ±20 V TA= 25°C 0.5 0.44 Continuous Drain Current 1.4 TA= 70°C ID 0.4 0.35 A TA= 25°C 0.69 0.53 Power Dissipation 1.4 TA= 70°C PD 0.44 0.34 W TA= 25°C 0.47 0.42 Continuous Drain Current 2.4 TA= 70°C ID 0.38 0.33 A TA= 25°C 0.6 0.47 Power Dissipation 2.4 TA= 70°C PD 0.39 0.3 W Pulsed Drain Current 3 IDM 1 A Maximum Junction-to-Lead RθJL 260 °C / W Operating Junction & Storage Temperature Range TJ, TSTG -55~150 °C SOT-23 W61* Top View A L C B D G H J F K E 1 2 3 1 2 3 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.70 3.10 G 0.09 0.18 B 2.10 2.65 H 0.35 0.65 C 1.20 1.40 J 0.08 0.20 D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.95 BSC. F 0.30 0.50 Pin Configuration (Top View) |
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