SSF2102 datasheet(2/2 Pages) SECOS

2 / 2 page

Elektronische Bauelemente

SSF2102

2.1A , 20V , RDS(ON) 60 mΩ

Ω

N-Channel Enhancement Mode Power MOSFET

14-Jan-2014 Rev.A

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=10µA

Gate-Threshold Voltage

VGS(th)

0.65

0.95

1.2

VDS=VGS, ID=50µA

Gate-Source Leakage Current

IGSS

±100

VGS= ±8V, VDS=0

Drain-Source Leakage Current

IDSS

µA

VDS=20V, VGS=0

Forward Transconductance

gfs

VDS=5V, ID=3.6A

Diode Forward Voltage

VSD

0.76

1.2

IS=0.94A, VGS=0

VGS=4.5V, ID=3.6A

Static Drain-Source On-Resistance

RDS(ON)

115

VGS=2.5V, ID=3.1A

Dynamic Characteristics

Total Gate Charge

Gate-Source Charge

Qgs

0.65

Gate-Drain Change

Qgd

1.5

ID=3.6A

VDS=10V

VGS=4.5V

Input Capacitance

Ciss

300

Output Capacitance

Coss

120

Reverse Transfer Capacitance

Crss

VGS =0

VDS=10V

f =1.0MHz

Switching Parameters

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDD=10V

VGEN=4.5V

RG=6

RL=5.5

ID=3.6A

Note:

Pulse Test : Pulse width≤300µs, duty cycle ≤2%.

These parameters have no way to verify.

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