Elektronische Bauelemente

SSN3139K

P Channel Enhancement MOSFET

12-Mar-2014 Rev. B

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

-20

-

-

V

Zero Gate Voltage Drain Current

-

-

-1

μA

Gate-Body Leakage Current

-

-

±20

μA

Gate Threshold Voltage

1

-0.35

-

-0.8

V

-

-

520

-

-

700

Drain-Source On-Resistance

1

-

-

950

mΩ

Forward Transconductance

1

-

1.2

-

S

Diode forward voltage

-

-

-1.2

V

Dynamic Characteristics

3

Input Capacitance

-

113

-

Output Capacitance

-

15

-

Reverse Transfer Capacitance

-

9

-

pF

f=1MHz

Switching Characteristics

3

Turn-On Delay Time

2

-

9

-

Rise Time

2

-

5.8

-

Turn-Off Delay Time

2

-

32.7

-

Fall Time

2

-

20.3

-

nS

Notes:

1. Pulse Test : Pulse Width=300µs, Duty Cycle=2%.

2. Switching characteristics are independent of operating junction temperatures.

3. Guaranteed by design, not subject to producting.