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SSPS7100N Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSPS7100N Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  Elektronische Bauelemente SSPS7100N 6.2 A , 100 V, RDS(ON) 62 m N-Ch Enhancement Mode Power MOSFET 11-Dec-2013 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. B E F G g A e b θ D C d RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are FEATURES Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ Leader Size DFN3x3-8PP 3K 13 inch MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V TA=25°C 6.2 A Continuous Drain Current 1 TA=70°C ID 4.6 A Pulsed Drain Current 2 IDM 50 A Continuous Source Current (Diode Conduction) 1 IS 5 A TA=25°C 3.5 W Total Power Dissipation 1 TA=70°C PD 2 W Operating Junction & Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Ratings t ≦ 10 sec 35 °C / W Thermal Resistance Junction-Ambient (Max.) 1 Steady State RθJA 81 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. DFN3x3-8PP Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 0.70 0.90 θ 0 ° 12 ° B 3.00BSC b 0.20 0.40 C 0.10 0.25 d 0.65BSC D 1.80 2.3 e 3.00BSC E3.2BSC g 0.70(TYP.) F 0.01 0.02 G 2.35BSC Top View |
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