Elektronische Bauelemente

SSM0410S

N-Channel Enhancement Mode Power MOSFET

27-Jun-2013 Rev.B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

100

-

-

V

Gate-Threshold Voltage

1

-

2.5

V

Forward Transconductance

-

4

-

S

Gate-Source Leakage Current

-

-

±100

nA

-

-

1

Drain-Source Leakage Current

-

-

5

μA

-

-

310

Static Drain-Source On-Resistance

2

-

-

320

mΩ

Total Gate Charge(10V)

-

9.1

-

Gate-Source Charge

-

2

-

Gate-Drain Change

-

1.4

-

nC

Turn-on Delay Time

2

-

2

-

Rise Time

-

21.6

-

Turn-off Delay Time

-

11.2

-

Fall Time

-

18.8

-

nS

Input Capacitance

-

508

-

Output Capacitance

-

29

-

Reverse Transfer Capacitance

-

16.4

-

pF

f =1.0MHz

Source-Drain Diode

Diode Forward Voltage

2

-

-

1.2

V

Continuous Source Current

1,4

-

-

3

A

Pulsed Source Current

2,4

-

-

5.5

A

Reverse Recovery Time

-

17.5

-

nS

Reverse Recovery Charge

-

14

-

nC

Note:

2. The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2%

3. The power dissipation is limited by 150°C, junction temperature.