http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Elektronische Bauelemente

SSM3055L

Ω

Ω

Ω

N-Channel Enhancement Mode MOSFET

26-Jul-2013 Rev. A

Page 2 of 4

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

60

-

-

V

Gate-Threshold Voltage

1

-

2.5

V

Gate-Body Leakage Current

-

-

nA

-

-

1

Drain-Source Leakage

Current

-

-

5

µA

-

-

100

Drain-Source On-Resistance

2

-

-

110

m

Total Gate Charge

-

5

-

Gate-Source Charge

-

1.68

-

Gate-Drain (‘’Miller’’)Charge

-

1.9

-

nC

Turn-on Delay Time

2

-

1.6

-

Rise Time

-

7.2

-

Turn-off Delay Time

-

25

-

Fall Time

-

14.4

-

nS

Input Capacitance

Ciss

-

511

-

Output Capacitance

Coss

-

38

-

Reverse Transfer Capacitance

Crss

-

25

-

pF

f=1.0MHz

Source-Drain Diode

Diode Forward Voltage

2

-

-

1.2

V

Continuous Source Current

1.4

-

-

2.8

Pulsed Source Current

2.4

-

-

12

A

Reverse Recovery Time

-

9.7

-

nS

Reverse Recovery Charge

-

5.8

-

nC

Notes:

1.

Surface mounted on a 1 inch2 FR4 board with 2OZ copper, t≦10sec., 125°C /W when mounted on Min. copper pad.

2.

The data tested by pulsed , pulse width≦300µs, duty cycle≦2%

3.

The power dissipation is limited by 150 °C junc tion temperature

4.