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SSPS7308NA Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SSPS7308NA
Description  N-Ch Enhancement Mode Power MOSFET
PDF  2 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSPS7308NA Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  SSPS7308NA Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SSPS7308NA Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
SSPS7308NA
17 A , 30 V , RDS(ON) 9 m
N-Ch Enhancement Mode Power MOSFET
09-Oct-2013 Rev. B
Page 2 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Gate-Threshold Voltage
VGS(th)
1
-
-
V
VDS=VGS, ID=250μA
Gate-Body Leakage Current
IGSS
-
-
±100
nA
VDS=0, VGS=±20V
-
-
1
VDS=24V, VGS=0
Zero Gate Voltage Drain Current
IDSS
-
-
25
μA
VDS=24V, VGS=0, TJ=55°C
On-State Drain Current
1
ID(on)
20
-
-
A
VDS=5V, VGS=10V
-
-
9
VGS=10V, ID=1A
Drain-Source On-Resistance
1
RDS(ON)
-
-
15
mΩ
VGS=4.5V, ID=1A
Forward Transconductance
1
gfs
-
40
-
S
VDS=15V, ID=1A
Diode Forward Voltage
VSD
-
0.7
-
V
IS=1, VGS=0
Dynamic
2
Total Gate Charge
Qg
-
10
-
Gate-Source Charge
Qgs
-
4
-
Gate-Drain Charge
Qgd
-
3
-
nC
VDS=10V
VGS=4.5V
ID=1A
Turn-On Delay Time
Td(on)
-
5
-
Rise Time
Tr
-
8
-
Turn-Off Delay Time
Td(off)
-
30
-
Fall Time
Tf
-
10
-
nS
VDD=10V
ID=1A
VGEN=10V
RL=6Ω
Notes:
1.
Pulse test：PW ≦ 300μs duty cycle ≦ 2%.
2.
Guaranteed by design, not subject to production testing.



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