SSF1320N datasheet(2/4 Pages) SECOS

2 / 4 page

SSF1320N

2A , 20V , RDS(ON) 58 mΩ

Ω

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

28-Aug-2012 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Gate-Threshold Voltage

VGS(th)

0.7

VDS=VGS, ID=250uA

Gate-Body Leakage

IGSS

±100

VDS=0, VGS= ±8V

Zero Gate Voltage Drain Current

IDSS

VDS=16V, VGS=0

VDS=16V, VGS=0, TJ=55°C

On-State Drain Current

ID(on)

VDS =5V, VGS=4.5V

Drain-Source On-Resistance

RDS(ON)

VGS=4.5V, ID=2A

VGS=2.5V, ID=1.7A

Forward Transconductance

gfs

11.3

VDS=10V, ID=2A

Diode Forward Voltage

VSD

0.75

IS=1.6A, VGS=0

Dynamic

Input Capacitance

Ciss

720

VDS=15V,

VGS=0,

f=1 MHz

Output Capacitance

Coss

165

Reverse Transfer Capacitance

Crss

Total Gate Charge

7.5

VDS=10V,

VGS=4.5V,

ID=2A

Gate-Source Charge

Qgs

0.6

Gate-Drain Charge

Qgd

Turn-on Delay Time

Td(on)

VDD=10V,

VGEN=4.5V,

RL=15 ,

ID=1A

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

Notes:

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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