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IRF6218LPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF6218LPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF6218S/LPbF 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage -150 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.17 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 120 150 m Ω VGS(th) Gate Threshold Voltage -3.0 ––– -5.0 V IDSS Drain-to-Source Leakage Current ––– ––– -25 µA ––– ––– -250 IGSS Gate-to-Source Forward Leakage ––– ––– -100 nA Gate-to-Source Reverse Leakage ––– ––– 100 Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units gfs Forward Transconductance 11 ––– ––– S Qg Total Gate Charge ––– 71 110 Qgs Gate-to-Source Charge ––– 21 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 32 ––– td(on) Turn-On Delay Time ––– 21 ––– tr Rise Time –––70––– ns td(off) Turn-Off Delay Time ––– 35 ––– tf Fall Time –––30––– Ciss Input Capacitance ––– 2210 ––– Coss Output Capacitance ––– 370 ––– Crss Reverse Transfer Capacitance ––– 89 ––– pF Coss Output Capacitance ––– 2220 ––– Coss Output Capacitance ––– 170 ––– Coss eff. Effective Output Capacitance ––– 340 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– -27 (Body Diode) A ISM Pulsed Source Current ––– ––– -110 (Body Diode) à VSD Diode Forward Voltage ––– ––– -1.6 V trr Reverse Recovery Time ––– 150 ––– ns Qrr Reverse Recovery Charge ––– 860 ––– nC Typ. ––– ––– Conditions VDS = -50V, ID = -16A ID = -16A VDS = -120V Conditions VGS = -10V f VGS = 0V VDS = -25V ƒ = 1.0MHz 210 -16 MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = -16A, VGS = 0V f TJ = 25°C, IF = -16A, VDD = -25V di/dt = -100A/µs f Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -10V, ID = -16A f VDS = VGS, ID = -250µA VDS = -120V, VGS = 0V VDS = -120V, VGS = 0V, TJ = 150°C VGS = -20V VGS = 20V Max. VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz VGS = 0V, VDS = -120V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to -120V VGS = -10V f VDD = -75V ID = -16A RG = 3.9Ω |
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