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CJD204R Datasheet(PDF) 1 Page - Continental Device India Limited

Part # CJD204R
Description  PNP SILICON POWER TRANSISTOR
PDF  4 Pages
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

CJD204R Datasheet(HTML) 1 Page - Continental Device India Limited

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PNP SILICON POWER TRANSISTOR
CJD204R
Pin Configurations:-
TO-251
Pin 1 :- Emitter
I PAK Plastic Package
Pin 2 :- Collector
Pin 3 :- Base
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
UNITS
Collector Base Voltage
V
Collector Emitter Voltage
V
Emitter Base Voltage
V
Collector Current (DC)
A
Collector Current (Peak Value tp=10ms)
A
Collector Current (Non Repetitive Peak
Value tp=2ms)
A
Base Current
A
Total Device Dissipation at Tmb=25 ºC
W
Operating and Storage Junction
Temperature Range
ºC
THERMAL CHARACTERISTICS
Junction to Mounting Base
K/W
Junction to Ambient in free air
K/W
ELECTRICAL CHARACTERISTICS (Ta=25 ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MAX
UNITS
Collector Cut Off Current
ICEO
VCE=30V, IB = 0
0.2
mA
Collector Cut Off Current
ICBO
VCB=40V, IE = 0, Tj=150 ºC
1.0
mA
Emitter Cut Off Current
IEBO
VEB=5V, IC = 0
0.5
mA
Collector Emitter Voltage
VCEO
IC=0.2A, IB=0
V
Base Emitter On Voltage
*VBE (on)
IC=3A, VCE=2V
1.5
V
Collector Emitter Saturation Voltage
*VCE (sat)
IC=3A, IB=0.3A
1.0
V
IC=6A, IB=0.6A
1.5
V
Base Emitter Saturation Voltage
*VBE (sat)
IC=6A, IB=0.6A
2.0
V
DC Current Gain
*hFE
IC=2A, VCE=2V
Cut Off Frequency
f hfe
IC=0.3A, VCE=3V
kHZ
Transition Frequency
fT
IC=0.3A, VCE=3V, f=1MHZ
MHz
Forward Bias Second Breakdown
Collector Current
ISB
VCE=40V, tp=0.1s
A
*Pulse test : Pulse Width < 300
µµs, Duty Cycle < 2%
CJD204R Rev300410E
SYMBOL
VCBO
VALUE
MIN
60
60
5
8
60
- 65 to +150
Pth (j-mb)
2.08
70
Pth (j-a)
7.0
1.5
VCEO
VEBO
IC
Tj, Tstg
Ptot
30
25
60
ICM
ICSM
IB
12
25
3
Continental Device India Limited
Data Sheet
Page 1 of 4
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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