2N3250 datasheet(2/4 Pages) CDIL

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PNP SILICON PLANAR SWITCHING TRANSISTORS

2N3250, A/ 2N3251,A

TO-18

Metal Can Package

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

SMALL SIGNAL CHARACTERISTICS

DESCRIPTION

SYMBOL

TEST CONDITION

2N3250, A

2N3251, A UNIT

DC Current Gain

*hFE

IC=0.1mA, VCE=1V

>40

>80

IC=1mA, VCE=1V

>45

>90

IC=10mA, VCE=1V

50 - 150

100 - 300

IC=50mA, VCE=1V

>15

>30

DYNAMIC CHARACTERISTICS

DESCRIPTION

SYMBOL

TEST CONDITION

2N3250, A

2N3251, A UNIT

VCE=10V, IC=1mA,

f=1KHz

VCE=10V, IC=1mA,

f=1KHz

VCE=10V, IC=1mA,

f=1KHz

VCE=10V, IC=1mA,

f=1KHz

VCE=5V, IC=0.1mA,

RS=1KΩ, f=100Hz

Transition Frequency

IC=10mA, VCE=20V,

f=100MHz

>250

>300

MHz

Output Capacitance

Cob

VCB=10V, IE=0,

f=100KHz

Input Capacitance

Cib

VEB=1V, IC=0,

f=100KHz

SWITCHING TIME

DESCRIPTION

SYMBOL

TEST CONDITION

2N3250, A

2N3251, A UNIT

Delay Time

Rise Time

Storage time

<175

<200

Fall Time

*Pulse Test: Pulse Width < 300

µµs, Duty Cycle < 2%

2N3250_A_2N3251_ARev_1 311003D

Noise Figure

Collector Base Time Constant

<35

<50

IC=10mA, VCE=20V,

f=31.8MHz

<250

rb'CC

<6.0

<8.0

Ω

<10

<20

4 - 40

10 - 60

x 10

-4

µΩ

50 - 200

100 -400

1.0 - 6.0

2.0 - 12.0

Input Impedence

Reverse Voltage Transfer Ratio

Output Admittance

hie

hre

hoe

VCC=3V, VBE=0.5V,

IC=10mA, IB1=1mA

VCC=3V, IC=10mA,

IB1=IB2=1mA

hfe

Small Signal Current Gain

Continental Device India Limited

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