PTB 20151

5

e

Schematic for f = 2 GHz

Q1

PTB 20151

NPN RF Transistor

Microstrip 50

Ω

.1

λ 2 GHz

Microstrip 75

Ω

.065

λ 2 GHz

Microstrip 16

Ω

.095

λ 2 GHz

Microstrip 12.5

Ω

.055

λ 2 GHz

Microstrip 9.7

Ω

.055

λ 2 GHz

Microstrip 12.5

Ω

.065

λ 2 GHz

Microstrip 22

Ω

C1, C6

0.1

µF

1206 Chip

C2, C7

10

µF, 35 V

SMT Tantalum

C3, C4, C8, C10

20 pF

ATC-100

C5, C9

0–4 pf

Johanson Trimmer

L1

56 nh

SMT Inductor

L2, L4

3 Turn #22, 0.25” O.D.

L3

4 mm.

SMT Ferrite

R1

22

Ω

1206 SMT Resistor

Board

0.031 G-200 Solid Copper Bottom, AlliedSignal

Bias Parts (not shown on layout)

Q2

BCP 56

SMT NPN Transistor

D1

BAV 99

Diode

C10, C11

0.1 pF

SMT Capacitor

R2

2K

Potentiometer

R3, R4

10

Ω

1206 SMT Resistor

* Thermally linked to RF device.

Ericsson Components

RF Power Products

675 Jarvis Drive

Morgan Hill, CA 95037 USA

Telephone: 408-778-9434

Specifications subject to change without notice.

L3

© 1996 Ericsson Inc.

EUS/KR 1301-PTB 20151 Uen Rev. C 09-28-98

1-877-GOLDMOS

(1-877-465-3667)

e-mail: rfpower@ericsson.com

www.ericsson.com/rfpower