2SJ449 datasheet(2/8 Pages) NEC

2 / 8 page

2SJ449

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

TEST CONDITIONS

Drain to Source On-Resistance

RDS(on)

0.55

0.8

VGS = –10 V, ID = –3.0 A

Gate to Source Cutoff Voltage

VGS(off)

–4.0

–4.8

–5.5

VDS = –10 V, ID = –1 mA

Forward Transfer Admittance

| yfs |

2.0

3.5

VDS = –10 V, ID = –3.0 A

Drain Leakage Current

IDSS

–100

VDS = –250 V, VGS = 0

Gate to Source Leakage Current

IGSS

m100

VGS =

m30 V, VDS = 0

Input Capacitance

Ciss

1040

VDS = –10 V

Output Capacitance

Coss

360

VGS = 0

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-On Delay Time

td(on)

ID = –3.0 A

Rise Time

VGS(on) = –10 V

Turn-Off Delay Time

td(off)

VDD = –125 V

Fall Time

RG = 10

Ω, RL = 42 Ω

Total Gate Charge

23.1

ID = –6.0 A

Gate to Source Charge

QGS

7.1

VDD = –200 V

Gate to Drain Charge

QGD

12.9

VGS = –10 V

Body Diode Forward Voltage

VF(S-D)

0.92

IF = –6.0 A, VGS = 0

Reverse Recovery Time

trr

155

IF = –6.0 A, VGS = 0

Reverse Recovery Charge

Qrr

930

di/dt = 50 A/

µs

Test Circuit 1 Avalanche Capability

Test Circuit 2 Switching Time

RG = 25

Ω

VDD

VGS = –20

→ 0 V

BVDSS

IAS

VDS

Starting Tch

RG = 10

Ω

D.U.T.

PG.

VDD

VGS

t = 1 s

Duty Cycle

≤ 1 %

10 %

90 %

10 %

90 %

VGS (on)

td (off)

td (on)

ton

toff

Test Circuit 3 Gate Charge

D.U.T.

VDD

Ω

IG = –2 mA

PG.

VDD

VGS

D.U.T.

VGS

Wave

Form

Wave

Form

UNIT

Ω

µA

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