ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

P2N2222, P2N2222A

DESCRIPTION

SYMBOL

TEST CONDITION

2222

2222A

UNIT

DC Current Gain

hFE

IC=0.1mA,VCE=10V

>35

>35

IC=1mA,VCE=10V

>50

>50

IC=10mA,VCE=10V

>75

>75

IC=10mA,VCE=10V

-

>35

Ta=55 deg C

IC=150mA,VCE=10V

100-300

100-300

IC=150mA,VCE=1V

>50

>50

IC=500mA,VCE=10V

>30

>40

DYNAMIC CHARACTERISTICS

ALL f=1kHz

Small Signal Current Gain

hfe

IC=1mA, VCE=10V

-

50-300

IC=10mA, VCE=10V

-

75-375

Input Inpedence

hie

IC=1mA, VCE=10V

-

2.0-8.0

kohms

IC=10mA, VCE=10V

-

0.25-1.25

Voltage Feedback Ratio

hre

IC=1mA, VCE=10V

-

8.0 x 10-4

IC=10mA, VCE=10V

-

4.0

Out put Adimttance

hoe

IC=1mA, VCE=10V

-

5.0-35

umhos

IC=10mA, VCE=10V

25-200

Collector Base Time Constant

rb'Cc

IE=20mA, VCB=20V

-

<150

ps

f=31.8MHz

Noise Figure

NF

IC=100uA, VCE=10V

-

<4.0

dB

Rs=1kohms, f=1kHz

DYNAMIC CHARACTERISTICS

Transistors Frequency

ft

IC=20mA, VCE=20V

>250

>300

MHz

f=100MHz

Out-Put Capacitance

Cob

VCB=10V, IE=0

<8.0

<8.0

pF

f=1MHz

Input Capacitance

Cib

VEB=0.5V, IC=0

<30

<25

pF

f=1MHz

SWITCHING Time

Delay time

td

IC=150mA,IB1=15mA

<10

ns

Rise time

tr

VCC=30V,VBE=0.5V

-

<25

ns

Storage time

ts

IC=150mA, IB1=

<225

ns

Fall time

tf

IB2=15mA, VCC=30V

-

<60

ns

*Pulse Condition: Length =300us, Duty Cycle=2%

Continental Device India Limited

Data Sheet

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