NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS

MPSA 13

MPSA 14

TO-92

CBE

ABSOLUTE MAXIMUM RATINGS.

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Emitter Voltage

VCES

30

V

Collector -Base Voltage

VCBO

30

V

Emitter -Base Voltage

VEBO

10

V

Collector Current -Continuous

IC

500

mA

Power Dissipation @ Ta=25 degC

PD

625

mW

Derate above 25 deg C

5.0

mW./deg C

Power Dissipation @ Tc=25 degC

PD

1.5

W

Derate above 25 deg C

12

mW./deg C

Operating And Storage Junction

Tj, Tstg

-55 to +150

deg C

Temperature Range

THERMAL RESISTANCE

Junction to Case

Rth(j-c)

83.3

deg C/W

Junction to Ambient

Rth(j-a)

200

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

Min

Max

UNIT

Collector -Emitter Voltage

VCES

IC=100uA,IB=0

30

-

V

Collector-Cut off Current

ICBO

VCB=30V, IE=0

-

100

nA

Emitter-Cut off Current

IEBO

VEB=10V, IC=0

-

100

nA

DC Current Gain

hFE*

MPSA13 IC=10mA,VCE=5V

5.0

-

K

MPSA14

10

-

K

MPSA13 IC=100mA,VCE=5V

10

-

K

MPSA14

20

-

K

Collector Emitter Saturation Voltage

VCE(Sat)* IC=100mA, IB=0.1mA

-

1.5

V

Base Emitter On Voltage

VBE(on) *

IC=100mA,VCE=5V

-

2.0

V

DYNAMIC CHARACTERISTICS

.

Current Gain-Bandwidth Product

ft**

IC=10mA, VCE=5V

125

-

MHz

f=100MHz

*Pulse Test: Pulse Width=300us, Duty Cycle=2%

**ft=/hfe/*ftest.

Continental Device India Limited

Data Sheet

Page 1 of 3

E B

C

E B

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Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company