FEATURES

APPLICATIONS

SEMICONDUCTOR

RoHS

RoHS

Complementary Silicon Power Transistor

Nell High Power Products

TIP31 (NPN) Series

TIP32 (PNP) Series

ABSOLUTE MAXIMUM RATINGS (T = 25°C)

C

UNIT

V

PARAMETER

Collector to emitter voltage (I = 0)

B

ºC

5

3

Collector current

Base current

Collector power dissipation

(Derate above 25

°C)

Junction temperature

40

40 (0.32)

1

VALUE

40

-65 to 150

150

A

Collector to base voltage (I = 0)

E

Emitter to base voltage (I = 0)

C

SYMBOL

Storage temperature

W(W/

°C)

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TO-220AB

5

Collector peak current (t < 5mS)

p

C

B

E

C

B

E

TIP32(PNP)

TIP31(NPN)

Complementary NPN-PNP transistors

Low collector-emitter saturation voltage

Satisfactory linearity of foward current

TO-220AB package which can be installed

to the heat sink with one screw

Audio amplifier

General purpose switching and amplifier

3A/40~100V/40W

Collector - Emitter Saturation Voltage:

V

= 1.2V

(MAX.) @ I = 3A

CE(sat)

dc

C

Collector - Emitter Saturation Voltage:

V

= 40V

(Min.) - TIP31,TIP32

CEO(sus)

dc

= 60V

(Min.) - TIP31A,TIP32A

dc

= 80V

(Min.) - TIP31B, TIP32B

dc

= 100V

(Min.) - TIP31C, TIP32C

dc

DC Current Gain h

= 25 (Min.) @ I = 1.0A

FE

c

High Current Gain - Bandwidth product

f = 3.0 MHz (Min.) @ I =0.5A

T

c

TIP31

TIP32

TIP31A

TIP32A

TIP31B

TIP32B

TIP31C

TIP32C

60

60

80

80

100

100

32

mJ

E

Unclamped inductive load energy (Note 1)

Note: 1. This rating is based on the capability of the transistor to operate safely is a circuit of:

I = 1.8A, L = 20mH, R

= 100Ω, P.R.F = 10Hz, V

= 20V

C

BE

CC

2.0 (0.016)

@T = 25

°C

C

@T = 25

°C

A

B

E

C

C