FEATURES

APPLICATIONS

SEMICONDUCTOR

RoHS

RoHS

Complementary Silicon Power Transistor

Nell High Power Products

TIP41 (NPN) Series

TIP42 (PNP) Series

ABSOLUTE MAXIMUM RATINGS (T = 25°C)

C

UNIT

V

PARAMETER

Collector to emitter voltage (I = 0)

B

ºC

5

6

Collector current

Base current

Collector power dissipation

(Derate above 25

°C)

Junction temperature

40

65 (0.52)

2

VALUE

40

-65 to 150

150

A

Collector to base voltage (I = 0)

E

Emitter to base voltage (I = 0)

C

SYMBOL

Storage temperature

W(W/

°C)

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10

Collector peak current (t < 0.3mS)

p

C

B

E

C

B

E

TIP42(PNP)

TIP41(NPN)

Complementary NPN-PNP transistors

Low collector-emitter saturation voltage

Satisfactory linearity of foward current

TO-220AB package which can be installed

to the heat sink with one screw

Audio amplifier

General purpose switching and amplifier

6A/40~100V/65W

Collector - Emitter Saturation Voltage:

V

= 1.5V

(MAX.) @ I = 6A

CE(sat)

dc

C

Collector - Emitter Saturation Voltage:

V

= 40V

(Min.) - TIP41,TIP42

CEO(sus)

dc

= 60V

(Min.) - TIP41A,TIP42A

dc

= 80V

(Min.) - TIP41B, TIP42B

dc

= 100V

(Min.) - TIP41C, TIP42C

dc

DC Current Gain h

= 30 (Min.) @ I = 0.3A

FE

c

High Current Gain - Bandwidth product

f = 3.0 MHz (Min.) @ I =0.5A

T

c

TIP41

TIP42

TIP

A

TIP

A

41

42

TIP

B

TIP

B

41

42

TIP

C

TIP

C

41

42

60

60

80

80

100

100

62.5

mJ

E

Unclamped inductive load energy (Note 1)

Note: 1. This rating is based on the capability of the transistor to operate safely is a circuit of:

I = 2.5A, L = 20mH, R

= 100Ω, P.R.F. = 10 Hz, V

= 10V

C

BE

CC

2.0 (0.016)

@T = 25

°C

C

@T = 25

°C

A

TO-220AB

B

E

C

C

THERMAL CHARACTERISTICS (T = 25°C)

C

UNIT

PARAMETER

VALUE

SYMBOL

Maximum thermal resistance, junction to case

1.67

Maximum thermal resistance, junction to ambient

ºC/W

ºC/W

57