LP1500P100

Phone:

(408) 988-1845

http://

www.filss.com

Revised:

1/20/01

Fax:

(408) 970-9950

Email:

sales@filss.com

• FEATURES

♦ 31 dBm Output Power at 1-dB Compression at 15 GHz

♦ 9 dB Power Gain at 15 GHz

♦ 42 dBm Output IP3 at 15GHz

♦ 60% Power-Added Efficiency

• DESCRIPTION AND APPLICATIONS

The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide

(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a

0.25

µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed

“mushroom” gate structure minimizes parasitic gate-source and gate resistance.

The epitaxial

structure and processing have been optimized for reliable high-power applications. The LP1500 also

features Si3N4 passivation and is available in die form or in other packages.

The LP1500P100 is designed for medium-power, linear amplification. This device is suitable for

applications in commercial and military environments, and it is appropriate to be used as a medium

power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high

efficiency amplifiers, and WLL systems.

• ELECTRICAL SPECIFICATIONS @ T

°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Saturated Drain-Source Current

375

490

600

mA

Power at 1-dB Compression

P-1dB

29.5

31

dBm

Power Gain at 1-dB Compression

G-1dB

8

9

dB

Power-Added Efficiency

PAE

60

%

Output Third-Order Intercept Point

IP3

42

dBm

Maximum Drain-Source Current

925

mA

Transconductance

300

400

mS

Gate-Source Leakage Current

10

100

µA

Pinch-Off Voltage

-0.25

-1.2

-2.0

V

Gate-Source Breakdown

Voltage Magnitude

-12

-15

V

Gate-Drain Breakdown

Voltage Magnitude

-12

-16

V

frequency=15 GHz