LP6836

Phone:

(408) 988-1845

http://

www.filss.com

Revised:

1/18/01

Fax:

(408) 970-9950

Email:

sales@filss.com

• FEATURES

♦ 25 dBm Output Power at 1-dB

Compression at 18 GHz

♦ 9.5 dB Power Gain at 18 GHz

♦ 55% Power-Added Efficiency

• DESCRIPTION AND APPLICATIONS

The LP6836 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)

Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-

write 0.25

µm by 360 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes

parasitic gate-source and gate resistances.

The epitaxial structure and processing have been

P70 and SOT343 package types.

Typical applications include high dynamic range driver stages for commercial applications including

wireless infrastructure systems and broad bandwidth amplifiers.

• ELECTRICAL SPECIFICATIONS @ T

°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Saturated Drain-Source Current

80

115

125

mA

Power at 1-dB Compression

P-1dB

24

25

dBm

Power Gain at 1-dB Compression

G-1dB

8.5

9.5

dB

Power-Added Efficiency

PAE

55

%

Maximum Drain-Source Current

190

mA

Transconductance

75

100

mS

Gate-Source Leakage Current

1

10

µA

Pinch-Off Voltage

-0.25

-1.2

-2.0

V

Gate-Source Breakdown

Voltage Magnitude

-11

-15

V

Gate-Drain Breakdown

Voltage Magnitude

-12

-16

V

Thermal Resistivity

Θ

JC

100

°C/W

frequency=18 GHz

DRAIN

BOND

PAD

SOURCE

BOND

PAD (2x)

DIE SIZE: 14.2X13.0 mils (360x330

µm)

DIE THICKNESS: 3.9 mils (100

µm)

BONDING PADS: 1.9X1.9 mils (50x50

µm)

GATE

BOND

PAD