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IXTX170P10P Datasheet(PDF) 1 Page - IXYS Corporation |
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IXTX170P10P Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 5 page  © 2013 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25°C to 150 °C -100 V V DGR T J = 25 °C to 150°C, R GS = 1MΩ -100 V V GSS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25°C (Chip Capability) -170 A I LRMS Lead Current Limit, RMS -160 A I DM T C = 25°C, Pulse Width Limited by TJM - 510 A I A T C = 25°C -170 A E AS T C = 25°C 3.5 J dv/dt I S ≤ I DM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns P D T C = 25°C 890 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6mm (0.062 in.) from Case for 10s 300 °C T SOLD Plastic Body for 10s 260 °C M d Mounting Force (PLUS247) 20..120 / 4.5..27 N/lb. Mounting Forque (TO-264) 1.13 / 10 Nm/lb.in. Weight PLUS247 6 g TO-264 10 g Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = - 250μA -100 V V GS(th) V DS = VGS, ID = -1mA - 2.0 - 4.0 V I GSS V GS = ±20V, VDS = 0V ±100 nA I DSS V DS = VDSS, VGS = 0V - 50 μA T J = 125°C - 250 μA R DS(on) V GS = -10V, ID = 0.5 • ID25, Note 1 12 m Ω PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated V DSS = -100V I D25 = -170A R DS(on) ≤ ≤≤≤≤ 12m Ω Ω Ω Ω Ω Features International Standard Packages Rugged PolarPTM Process High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low Package Inductance Advantages Easy to Mount Space Savings High Power Density Applications High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators DS99974B(01/13) IXTK170P10P IXTX170P10P G = Gate D = Drain S = Source Tab = Drain PLUS247 (IXTX) Tab G D S TO-264 (IXTK) S G D Tab |
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