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IRF1010NLPBF Datasheet(PDF) 1 Page - International Rectifier

Part # IRF1010NLPBF
Description  Advanced Process Technology
PDF  11 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF1010NLPBF Datasheet(HTML) 1 Page - International Rectifier

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IRF1010NSPbF
IRF1010NLPbF
HEXFET® Power MOSFET
03/11/04
VDSS = 55V
RDS(on) = 11mΩ
ID = 85A
‡
S
D
G
Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010NL) is available for low-
profile applications.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ˆ
85
‡
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
ˆ
60
A
IDM
Pulsed Drain Current
ˆ
290
PD @TC = 25°C
Power Dissipation
180
W
Linear Derating Factor
1.2
W/°C
VGS
Gate-to-Source Voltage
± 20
V
IAR
Avalanche Current

43
A
EAR
Repetitive Avalanche Energy

18
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒˆ
3.6
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
2
D Pak
TO-262
IRF1010NLPbF
www.irf.com
1
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.85
RθJA
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
40
°C/W
Thermal Resistance
PD - 95103
IRF1010NSPbF


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