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STW16N65M5 Datasheet(PDF) 8 Page - STMicroelectronics

Part # STW16N65M5
Description  N-channel 650 V, 0.230 Ω, 12 A MDmesh™V Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247
PDF  20 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW16N65M5 Datasheet(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STF/I/P/U/W16N65M5
8/20
Doc ID 15210 Rev 4
Figure 14.
Gate charge vs gate-source voltage Figure 15.
Normalized on resistance vs
temperature
Figure 16.
Normalized gate threshold voltage
vs temperature
Figure 17.
Source-drain diode forward
characteristics
Figure 18.
Switching losses vs gate resistance
(1)
1.
Eon including reverse recovery of a SiC diode
VGS
6
4
2
0
0
10
Qg(nC)
(V)
8
25
10
VDD=520V
ID=6A
12
5
15
20
30
35
100
200
300
400
500
VDS
AM03182v1
RDS(on)
1.7
1.5
1.3
0.5
-50
0
TJ(°C)
(norm)
50
100
0.7
0.9
1.1
2.1
1.9
VGS=10V
ID=6.5V
AM03185v1
VGS(th)
1.00
0.90
0.80
0.70
-50
0
TJ(°C)
(norm)
1.10
50
100
ID=250µA
AM03184v1
VSD
0
5
ISD(A)
(V)
10
0.4
0.5
0.6
0.7
0.8
0.9
1.0
TJ=25°C
TJ=150°C
TJ=-25°C
AM03186v1
E
60
40
20
0
0
20
RG(
Ω)
(
μJ)
10
30
80
100
40
Eon
Eoff
AM10359v1



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