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ZXGD3101EV2 Datasheet(PDF) 6 Page - Diodes Incorporated

Part # ZXGD3101EV2
Description  The purpose of this board is to demonstrate synchronous rectification and driving of a MOSFET
PDF  8 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXGD3101EV2 Datasheet(HTML) 6 Page - Diodes Incorporated

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ZXGD3101EV2
Issue 1 – December 2009
www.diodes.com
© Diodes Incorporated 2009
6
(a)
(b)
Figure 6: Oscillation-induced spurious turn on reduces efficiency of synchronous rectification
(a) Oscillation due to clamp diode recovery (b) Improved clamp circuit
Overcoming premature turn-off
The high current di/dt coupled with low RDS(on) voltage drop causes VSD to rise rapidly toward zero,
which could make the controller more susceptible to closed-loop instability-induced malfunction under
this circumstance. One phenomenon that could occur particularly with a sub-10m
MOSFET is a
sudden fall of the ZXGD3101’s internal bias transistor voltage gain, which causes the gate drive
voltage to back off, even though the MOSFET is still conducting substantial current. When this
happens it leads to premature fall-off of the controller gate drive voltage (refer to Fig. 7a) which
causes inadequate enhancement of the MOSFET and reduces the effectiveness of synchronous
rectification. To make matters worse, the subsequent ringing incurs additional gate charge loss and
further deteriorates the efficiency.
If the above mentioned problem is observed, the on-board constant bias current source should be
used instead. This could be easily implemented using Q1 alongside R1, R2 and R3 (refer to Fig. 2).



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