STGW60H65F datasheet(3/12 Pages) STMICROELECTRONICS

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STGW60H65F

Electrical characteristics

Doc ID 019012 Rev 4

3/12

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 2 mA

650

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 60 A

1.9

VGE = 15 V, IC = 60 A

TJ = 125 °C

2.1

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

6.0

ICES

Collector cut-off current

(VGE = 0)

VCE = 650 V

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ± 20 V

250

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz, VGE=0

7150

275

140

Total gate charge

VCC = 400 V, IC = 60 A,

VGE = 15 V

217

Qge

Gate-emitter charge

Qgc

Gate-collector charge

Table 6.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

(1)

(di/dt)on

(1)

Turn-on delay time

Current rise time

Turn-on current slope

VCE = 400 V, IC = 60 A,

RG = 10 Ω, VGE = 15 V

2000

A/µs

td(on)

(1)

(di/dt)on

(1)

Turn-on delay time

Current rise time

Turn-on current slope

VCE = 400 V, IC = 60 A,

RG = 10 Ω, VGE = 15 V

TJ = 125 °C

1800

A/µs

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