NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00129H

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information

1/

SFF80N20 ___ ___ ___

│

│

│

│

│

│

│

│

└

│

│

│

│

│

└

└

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

__ = Straight Leads

DB = Down Bend

UB = Up Bend

M = TO-254

Z = TO-254Z

N = TO-258

P = TO-259

SFF80N20 Series

80 AMP , 200 Volts, 25 mΩ

Avalanche Rated N-channel

MOSFET

Features:



Rugged poly-Si gate



Lowest ON-resistance in the industry



Avalanche rated



Hermetically Sealed, Isolated Package



Low Total Gate Charge



Fast Switching



TX, TXV, S-Level screening available



Symbol

Value

Units

Drain - Source Voltage

200

V

Gate – Source Voltage

continuous

transient

±20

±30

V

Max. Continuous Drain Current (package

limited)

55

A

Max. Instantaneous Drain Current (Tj limited)

80

48

A

Max. Avalanche current

@ L= 0.1 mH

60

A

Single and Repetitive Avalanche Energy

@ L= 0.1 mH

1500

50

mJ

Total Power Dissipation

150

W

Operating & Storage Temperature

-55 to +175

ºC

Maximum Thermal Resistance

(Junction to Case)

1.0

(typ.0.75)

ºC/W

TO-254 (M)

TO-254Z (Z)

TO-258 (N)

TO-259 (P)

NOTES:

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ For lead bending options / pinout configurations - contact factory.

4/ Maximum current limited by package configuration

5/ Unless otherwise specified, all electrical characteristics @25