© Semiconductor Components Industries, LLC, 2006

March, 2006 − Rev. 7

1

Publication Order Number:

M1MA151AT1/D

M1MA151AT1,

M1MA152AT1

Preferred Device

Single Silicon Switching

Diodes

These Silicon Epitaxial Planar Diodes are designed for use in ultra

high speed switching applications. These devices are housed in the

SC−59 package which is designed for low power surface mount

applications.

Features

Rating

Symbol

Value

Unit

Reverse Voltage

M1MA151AT1

M1MA152AT1

40

80

Vdc

Peak Reverse Voltage

M1MA151AT1

M1MA152AT1

40

80

Vdc

Forward Current

100

mAdc

Peak Forward Current

225

mAdc

Peak Forward Surge Current

(Note 1)

500

mAdc

THERMAL CHARACTERISTICS

Rating

Symbol

Max

Unit

Power Dissipation

200

mW

Junction Temperature

150

°C

Storage Temperature

− 55 to + 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. t = 1 SEC

http://onsemi.com

Preferred devices are recommended choices for future use

and best overall value.

SC−59

CASE 318D

SC−59 PACKAGE SINGLE SILICON

SWITCHING DIODES 40/80 V−100 mA

SURFACE MOUNT

MARKING DIAGRAM

1

ANODE

3

2

CATHODE

1

NO CONNECTION

Mx M

G

G

Mx = Device Code

x = A for 151

B for 152

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION