MAC4DHM datasheet(1/7 Pages) ONSEMI

Part #	MAC4DHM

Description	Sensitive Gate Triacs Silicon Bidirectional Thyristors

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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January, 2009 − Rev. 6

1

Publication Order Number:

MAC4DHM/D

MAC4DHM

Preferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors

Designed for high volume, low cost, industrial and consumer

applications such as motor control; process control; temperature, light

and speed control.

Features

• Small Size Surface Mount DPAK Package

• Passivated Die for Reliability and Uniformity

• Four−Quadrant Triggering

• Blocking Voltage to 600 V

• On−State Current Rating of 4.0 A RMS at 93°C

• Low Level Triggering and Holding Characteristics

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings:

Human Body Model, 3B

u 8000 V

Machine Model, C

u 400 V

• Pb−Free Packages are Available

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

(TJ = −40 to 110°C, Sine Wave,

50 to 60 Hz, Gate Open)

VDRM,

VRRM

600

V

On−State RMS Current

(Full Cycle Sine Wave, 60 Hz, TC = 93°C)

IT(RMS)

4.0

A

Peak Non-Repetitive Surge Current

(One Full Cycle, 60 Hz, TJ = 110°C)

ITSM

40

A

Circuit Fusing Consideration (t = 8.3 msec)

I2t

6.6

A2sec

Peak Gate Power

(Pulse Width ≤ 10 msec, TC = 93°C)

PGM

2.0

W

Average Gate Power

(t = 8.3 msec, TC = 93°C)

PG(AV)

1.0

W

Peak Gate Current

(Pulse Width ≤ 20 msec, TC = 93°C)

IGM

4.0

A

Peak Gate Voltage

(Pulse Width ≤ 20 msec, TC = 93°C)

VGM

5.0

V

Operating Junction Temperature Range

TJ

−40 to 110

°C

Storage Temperature Range

Tstg

−40 to 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the device are exceeded.

TRIACS

4.0 AMPERES RMS

600 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

PIN ASSIGNMENT

1

2

3

Gate

Main Terminal 1

Main Terminal 2

4

Main Terminal 2

MT1

G

MT2

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

DPAK−3

CASE 369D

STYLE 6

DPAK

CASE 369C

STYLE 6

MARKING

DIAGRAMS

Y

= Year

WW

= Work Week

AC4DHM = Device Code

G= Pb−Free Package

1 2

3

4

YWW

AC

4DHMG

1

2

3

4

YWW

AC

4DHMG

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Motorola, Inc	MAC4DHM	131Kb / 6P	TRIACS 4.0 AMPERES RMS 600 VOLTS
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HAOPIN MICROELECTRONICS...	MAC4DHM	382Kb / 5P	Blocking voltage to 600 V
ON Semiconductor	MAC4DHM-001	104Kb / 8P	Sensitive Gate Triacs Silicon Bidirectional Thyristors August, 2004 ??Rev. 4

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