NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0028A

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

TO-254

TO-254Z

Note 1: maximum current limited by package configuration

SFF23N60M

SFF23N60Z

15 AMP, 600 Volts, 320 mΩ

Avalanche Rated N-channel

MOSFET

Features:

•

Advanced low gate charge process

•

Lowest ON-resistance in the industry

•

Avalanche rated

•

Hermetically Sealed, Isolated Package

•

Low Total Gate Charge

•

Fast Switching

•

TX, TXV, S-Level screening available

•

Maximum Ratings

Symbol

Value

Units

Drain - Source Voltage

600

V

Gate – Source Voltage

continuous

transient

±30

±40

V

Max. Continuous Drain Current (package limited)

15

7

A

Max. Instantaneous Drain Current (Tj limited)

23

A

Max. Avalanche current

@ L= 0.1 mH

23

A

Single / Repetitive Avalanche Energy

@ L= 0.1 mH

1500 / 30

mJ

Total Power Dissipation

150

W

Operating & Storage Temperature

-55 to +150

ºC

Maximum Thermal Resistance

(Junction to Case)

Rjc

0.83 (typ.0.6)

ºC /W

TO254

(M)

TO254Z

(Z)