FT0045B datasheet(2/2 Pages) SSDI

2 / 2 page

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0045B

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFR9130S.5

Electrical Characteristics 3/

Symbol

Min

Typ Max Units

Drain to Source Breakdown Voltage

VGS = 0V, ID =0.25 mA

BVDSS

-100

-115

––

Drain to Source On State Resistance

VGS = 10V, ID = 13A, Tj= 25

VGS = 10V, ID = 13A, Tj= 125

RDS(on)

––

100

––



Gate Threshold Voltage

VDS = 5 V, ID = 250A, Tj= 25

VDS = 5 V, ID = 250A, Tj= 125

VDS = 5 V, ID = 250A, Tj= -55

VGS(th)

-2.0

-1.0

––

-3.2

-2.5

-3.6

-4.0

––

-5.0

Gate to Source Leakage

VGS = ±15V, Tj= 25

VGS = ±15V, Tj= 125

IGSS

––

±50

±200

Zero Gate Voltage Drain Current

VDS = -100V, VGS = 0V, Tj = 25

VDS = -100V, VGS = 0V, Tj = 125

IDSS

––

0.01

250

A

Forward Transconductance

VDS = 10V, ID = 10A, Tj = 25

gfs

––

Mho

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS = 10V

VDS = 80V

ID = 10A

Qgs

Qgd

––

8.5

––

Turn on Delay Time

Rise Time

Turn off Delay Time

Fall Time

VGS = 10V

VDS = 50V

ID = 10A

RG = 10

td(on)

td(off)

––

100

150

nsec

Diode Forward Voltage

IF = 10A, VGS = 0V

VSD

––

0.85

1.5

Diode Reverse Recovery Time

Peak Reverse Recovery Current

Reverse Recovery Charge

IF = 10A, di/dt = 100A/usec

trr

Qrr

––

150

––

nsec

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1 MHz

Ciss

Coss

Crss

––

3500

300

110

4000

400

200

PACKAGE OUTLINE:

SMD.5

PINOUT:

PIN 1: DRAIN

PIN 2: SOURCE

PIN 3: GATE

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