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FZT489 Datasheet(PDF) 4 Page - Diodes Incorporated

Part # FZT489
Description  30V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FZT489 Datasheet(HTML) 4 Page - Diodes Incorporated

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FZT489
Document Number DS33134 Rev. 4 - 2
4 of 7
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FZT489
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
50
−
−
V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 10)
BVCEO
30
−
−
V
IC = 10mA
Emitter-Base Breakdown Voltage
BVEBO
7
−
−
V
IE = 100µA
Collector Cut-off Current
ICBO
−
−
100
nA
VCB = 30V
Collector Cut-off Current
ICES
−
−
100
nA
VCE = 30V
Emitter Cut-off Current
IEBO
−
−
100
nA
VEB = 4V
Collector-Emitter Saturation Voltage (Note 10)
VCE(sat)
−
−
−
−
0.3
0.6
V
IC = 1A, IB = 100mA
IC = 2A, IB = 200mA
Base-Emitter Saturation Voltage (Note 10)
VBE(sat)
−
−
1.1
V
IC = 1A, IB = 100mA
Base-Emitter Turn-On Voltage (Note 10)
VBE(on)
−
−
1.0
V
IC = 1A, VCE = 2V
DC Current Gain (Note 10)
hFE
100
100
60
20
−
−
−
−
−
300
−
−
−
IC = 1mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
IC = 4A, VCE = 2V
Current Gain-Bandwidth Product (Note 10)
fT
150
−
−
MHz
VCE = 10V, IC = 50mA
f = 100MHz
Output Capacitance (Note 10)
Cobo
−
−
10
pF
VCB = 10V, f = 1MHz
Notes:
10. Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle ≤ 2%



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