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IXFX24N100Q3 Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXFX24N100Q3
Description  Advance Technical Information
PDF  5 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFX24N100Q3 Datasheet(HTML) 1 Page - IXYS Corporation

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© 2011 IXYS CORPORATION, All Rights Reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
1000
V
V
DGR
T
J
= 25
°C to 150°C, R
GS = 1MΩ
1000
V
V
GSS
Continuous
±30
V
V
GSM
Transient
±40
V
I
D25
T
C = 25°C
24
A
I
DM
T
C = 25°C, Pulse Width Limited by TJM
60
A
I
A
T
C = 25°C
24
A
E
AS
T
C = 25°C2
J
dv/dt
I
S
≤ I
DM, VDD ≤ VDSS, TJ ≤ 150°C
50
V/ns
P
D
T
C = 25°C
1000
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6mm (0.062 in.) from Case for 10s
300
°C
T
SOLD
Plastic Body for 10s
260
°C
M
d
Mounting Torque (TO-264)
1.13/10
Nm/lb.in.
F
C
Mounting Force
(PLUS247)
20..120 /4.5..27
N/lb.
Weight
TO-264
10
g
PLUS247
6
g
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
BV
DSS
V
GS = 0V, ID = 1mA
1000
V
V
GS(th)
V
DS = VGS, ID = 4mA
3.5
6.5
V
I
GSS
V
GS = ±30V, VDS = 0V
±200 nA
I
DSS
V
DS = VDSS, VGS = 0V
25
μA
T
J = 125°C
1.5 mA
R
DS(on)
V
GS = 10V, ID = 0.5 • ID25, Note 1
440 m
Ω
HiperFETTM
Power MOSFETs
Q3-Class
IXFK24N100Q3
IXFX24N100Q3
V
DSS
=
1000V
I
D25
=
24A
R
DS(on) ≤
≤≤≤≤
440m
Ω
Ω
Ω
Ω
Ω
t
rr
≤≤≤≤≤
300ns
DS100393(10/11)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
G = Gate
D
= Drain
S = Source
Tab = Drain
PLUS247 (IXFX)
Tab
G
D
S
TO-264 (IXFK)
S
G
D
Tab
Features
Low Intrinsic Gate Resistance
Low Package Inductance
Fast Intrinsic Rectifier
Low R
DS(on) and QG
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
Advance Technical Information


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