IXTP06N120P datasheet(1/4 Pages) IXYS

Part #	IXTP06N120P

Description	Polar Power MOSFET

PDF	4 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 4 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1200

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

1200

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

0.6

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

1.2

A

I

A

T

C = 25°C

0.6

A

E

AS

T

C = 25°C50

mJ

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

10

V/ns

P

D

T

C = 25°C42

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque

(TO-220)

1.13 / 10

Nm/lb.in.

Weight

TO-263

2.5

g

TO-220

3.0

g

DS99872C(07/09)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

1200

V

GS(th)

V

DS = VGS, ID = 50μA

2.0

4.0

V

I

GSS

V

GS = ±20V, VDS = 0V

±50 nA

I

DSS

V

DS = VDSS, VGS= 0V

3

μA

T

J = 125°C

125

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

27

34

Ω

PolarTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTA06N120P

IXTP06N120P

V

DSS

= 1200V

I

D25

= 0.6A

R

DS(on) ≤

≤≤≤≤ 34Ω

Ω

Features

International Standard Packages

Avalanche Rated

Low Package Inductance

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

High Voltage Switched-Mode and

Resonant-ModePower Supplies

High Voltage Pulse Power

Applications

High Voltage Discharge Circuits in

Lasers Pulsers, Spark Igniters, RF

Generators

High Voltage DC-DC Converters

High Voltage DC-AC Inverters

G = Gate

D

= Drain

S = Source

TAB = Drain

TO-220 (IXTP)

TO-263 (IXTA)

G

S

D (TAB)

(TAB)

D

G

S

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