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BC558 Datasheet(PDF) 2 Page - General Semiconductor

Part # BC558
Description  Small Signal Transistors (PNP)
PDF  6 Pages
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

BC558 Datasheet(HTML) 2 Page - General Semiconductor

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ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
BC556 THRU BC559
Symbol
Min.
Typ.
Max.
Unit
h-Parameters
at –VCE = 5 V, –IC = 2 mA, f = 1 kHz
Current Gain
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance
Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
Current Gain Group A
B
C
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
hre
hre
hre
–
–
–
1.6
3.2
6
–
–
–
–
–
–
220
330
600
2.7
4.5
8.7
18
30
60
1.5 · 10–4
2 · 10–4
3 · 10–4
–
–
–
4.5
8.5
15
30
60
110
–
–
–
–
–
–
k
Ω
k
Ω
k
Ω
µS
µS
µS
–
–
–
DC Current Gain
at –VCE = 5 V, –IC = 10 µA
Current Gain Group A
B
C
at –VCE = 5 V, –IC = 2 mA
Current Gain Group A
B
C
at –VCE = 5 V, –IC = 100 mA
Current Gain Group A
B
C
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
–
–
–
110
200
420
–
–
–
90
150
270
180
290
500
120
200
400
–
–
–
220
450
800
–
–
–
–
–
–
–
–
–
–
–
–
Thermal Resistance Junction to Ambient Air
RthJA
––
2501)
K/W
Collector Saturation Voltage
at –IC = 10 mA, –IB = 0.5 mA
at –IC = 100 mA, –IB = 5 mA
–VCEsat
–VCEsat
–
–
80
250
300
650
mV
mV
Base Saturation Voltage
at –IC = 10 mA, –IB = 0.5 mA
at –IC = 100 mA, –IB = 5 mA
–VBEsat
–VBEsat
–
–
700
900
–
–
mV
mV
Base-Emitter Voltage
at –VCE = 5 V, –IC = 2 mA
at –VCE = 5 V, –IC = 10 mA
–VBE
–VBE
600
–
660
–
750
800
mV
mV
Collector-Emitter Cutoff Current
at –VCE = 80 V
BC556
at –VCE = 50 V
BC557
at –VCE = 30 V
BC558
at –VCE = 80 V, Tj = 125 °C
BC556
at –VCE = 50 V, Tj = 125 °C
BC557
at –VCE = 30 V, Tj = 125 °C
BC558, BC559
–ICES
–ICES
–ICES
–ICES
–ICES
–ICES
–
–
–
–
–
–
0.2
0.2
0.2
–
–
–
15
15
15
4
4
4
nA
nA
nA
µA
µA
µA
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.



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