TG0004B datasheet(2/2 Pages) SSDI

2 / 2 page

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TG0004B

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SSG60N60 Series

Electrical Characteristics

Symbol

Min

Typ

Max

Units

Collector – Emitter Breakdown Voltage

VGE = 0V, IC = 250μA V(BR)CES

600

––

Collector – Emitter Saturation Voltage

VGE = 15V, IC = 60A VCE(SAT)

––

2.0

2.5

Gate – Emitter Threshold voltage

VGE = VCE, IC = 250mA

VGE(th)

––

6.5

Zero Gate Voltage Collector Current

VCE = 600V, VGE = 0V

TJ = 25

TJ = 150

ICES

––

0.5

0.35

250

5.0

μA

Gate – Emitter Leakage Current

VGE = 20V, VCE = 0V

IGES

––

100

Input Capacitance

VCE = 25V, VGE = 0V, f = 1 MHz

CISS

––

4000

––

Output Capacitance

VCE = 25V, VGE = 0V, f = 1 MHz

COSS

––

300

––

Reverse Transfer Capacitance

VCE = 25V, VGE = 0V, f = 1 MHz

CRSS

––

Turn on Delay Time

Rise Time

Turn off Delay Time

Fall Time

VCC = 400V, IC = 50ADC,

VGE = 15V, tP = 10µsec,

Duty Cycle ≤ 1%

td(on)

td(off)

––

140

300

150

––

nsec

TO-258 (N)

TO-259 (P)

SMD2 (S2)

Available Part Numbers:

SSG60N60N, SSG60N60NUB, SSG60N60NDB,

SSG60N60P, SSG60N60PUB, SSG60N60PDB,

SSG60N60S2

PIN ASSIGNMENT (Standard)

Package

Collector

Emitter

Gate

TO-258 (N)

Pin 1

Pin 2

Pin 3

TO-259 (P)

Pin 1

Pin 2

Pin 3

SMD2

Pin 1

Pin 2

Pin 3

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