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GI810 Datasheet(PDF) 1 Page - General Semiconductor

Part # GI810
Description  GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
PDF  2 Pages
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

GI810 Datasheet(HTML) 1 Page - General Semiconductor

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GI810 THRU GI818
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0 Ampere
FEATURES
♦ Plastic package has
Underwriters Laboratory
Flammability Classification 94V-0
♦ High temperature metallurgically
bonded construction
♦ Glass passivated cavity-free junction
♦ Capable of meeting environmental standards of
MIL-S-19500
♦ Fast switching for high efficiency
♦ 1.0 Ampere operation at TA=75°C with no thermal
runaway
♦ Typical IR less than 0.1µA
♦ High temperature soldering guaranteed:
350°C/10 seconds 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-204AC molded plastic over glass body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position:Any
Weight: 0.015 ounce, 0.4 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
GI
GI
GI
GI
GI
GI
GI
SYMBOLS
810
811
812
814
816
817
818
UNITS
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
Volts
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
Volts
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=75°C
I(AV)
1.0
Amp
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) at TA=75°C
IFSM
30.0
Amps
Maximum instantaneous forward voltage at 1.0A
VF
1.2
Volts
Maximum DC reverse current
TA=25°C
10.0
at rated DC blocking voltage
TA=100°C
IR
100.0
µA
Maximum reverse recovery time (NOTE 1)
trr
750.0
ns
Typical junction capacitance (NOTE 2)
CJ
25.0
pF
Typical thermal resistance (NOTE 3)
R
ΘJA
45.0
°C/W
Operating junction and storage temperature range
TJ, TSTG
-65 to +175
°C
NOTES:
(1) Reverse recovery test conditions: IF=1.0A, VR=30V, di/dt=50A/
µs
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted
4/98
0.034 (0.86)
0.028 (0.71)
0.140 (3.6)
0.104 (2.6)
DIA.
DIA.
1.0
MIN.
(25.4)
0.230 (5.8)
0.300 (7.6)
1.0
MIN.
(25.4)
DO-204AC
Dimensions in inches and (millimeters)
*Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306
®


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