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TR0076 Datasheet(PDF) 1 Page - Solid States Devices, Inc |
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TR0076 Datasheet(HTML) 1 Page - Solid States Devices, Inc |
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1 / 2 page ![]() Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT5671 __ __ __ SFT5672 __ __ __ SFT5672E __ __ __ │ │ │ │ │ │ │ │ └ Screening __ = No Screening TX = TX Level TXV = TXV Level S = S Level │ │ │ └ Lead Bend 3/ 4/ __ = Straight Leads UB = Up Bend DB = Down Bend └ Package 3/ /3 = TO-3 M = TO-254 S1 = SMD 1 SFT5671 and SFT5672 SFT5672E 30 – 50 AMPS 90 - 130 Volts High Power NPN Transistors Features: • High Frequency transistor with BVCEO to 130 Volts • Enhanced SOA capability and Fast Switching • High Power Dissipation 140 Watts • 200 oC Operating Temperature • TX, TXV, S-Level Screening per MIL-PRF-19500 available; consult factory • Enhanced performance version: SFT5672E Maximum Ratings Symbol Value Units Collector – Emitter Voltage SFT5671 SFT5672 SFT5672E VCEO 90 120 130 Volts Collector – Base Voltage SFT5671 SFT5672 SFT5672E VCBO 120 150 250 Volts Emitter – Base Voltage VEBO 7 Volts Collector Current SFT5671, SFT5672 SFT5672E IC 30 50 Amps Base Current IB 10 Amps Total Power Dissipation TO-3 (TC ≤ 25ºC) TO-254 (TC ≤ 25ºC) SMD 1 (TC ≤ 25ºC) PD 140 116 175 Watts Operating & Storage Temperature TJ & TSTG -65 to +200 ºC Maximum Thermal Resistance (Junction to Case) TO-3 TO-254 SMD 1 R0JC 1.25 1.5 1.0 ºC/W TO-3 (/3) TO-254 (M) SMD 1(S1) NOTES: 1/ For Ordering Information, Price, and Availability Contact Factory. 3/ For Package Outlines Contact Factory. 4/ Up and Down Bend Configurations are Available for ‘M’ (TO-254) Packages Only. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0076C DOC |
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