 Semiconductor Components Industries, LLC, 2011

November, 2011 − Rev. 10

Publication Order Number:

BAT54SWT1/D

1

BAT54SWT1G,

NSVBAT54SWT1G

Dual Series Schottky

Barrier Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

Features

Unique Site and Control Change Requirements

Compliant*

Rating

Symbol

Value

Unit

Reverse Voltage

30

V

Forward Power Dissipation

Derate above 25C

200

1.6

mW

mW/C

Forward Current (DC)

200 Max

mA

Non−Repetitive Peak Forward Current

600

mA

Repetitive Peak Forward Current

Pulse Wave = 1 sec,

Duty Cycle = 66%

300

mA

Junction Temperature

−55 to 125

C

Storage Temperature Range

−55 to +150

C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

30 VOLT

DUAL SERIES SCHOTTKY

BARRIER DIODES

3

CATHODE/ANODE

1

ANODE

2

CATHODE

Device

Package

ORDERING INFORMATION

BAT54SWT1G

SOT−323

(Pb−Free)

3,000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SOT−323

CASE 419

STYLE 9

MARKING DIAGRAM

B8M G

G

B8

= Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

1

NSVBAT54SWT1G

SOT−323

(Pb−Free)

3,000 /

Tape & Reel