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IXTP2R4N120P Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXTP2R4N120P
Description  N-Channel Enhancement Mode
PDF  4 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTP2R4N120P Datasheet(HTML) 1 Page - IXYS Corporation

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© 2008 IXYS CORPORATION, All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
1200
V
V
DGR
T
J
= 25
°C to 150°C, R
GS = 1MΩ
1200
V
V
GSS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C = 25°C
2.4
A
I
DM
T
C = 25°C, pulse width limited by TJM
6A
I
A
T
C = 25°C
2.4
A
E
AS
T
C = 25°C
200
mJ
dV/dt
I
S
≤ I
DM, VDD ≤ VDSS, TJ ≤ 150°C
10
V/ns
P
D
T
C = 25°C
125
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6mm (0.062) from case for 10s
300
°C
T
SOLD
Plastic body for 10s
260
°C
M
d
Mounting torque
(TO-220, TO-247)
1.13 / 10
Nm/lb.in.
Weight
TO-263
2.5
g
TO-220
3.0
g
TO-247
6.0
g
DS99873A (04/08)
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Min.
Typ.
Max.
BV
DSS
V
GS = 0V, ID = 250μA
1200
V
V
GS(th)
V
DS = VGS, ID = 250μA
2.5
4.5
V
I
GSS
V
GS = ±20V, VDS = 0V
±50 nA
I
DSS
V
DS = VDSS
5
μA
V
GS = 0V
T
J = 125°C
300
μA
R
DS(on)
V
GS = 10V, ID = 0.5 • ID25, Note 1
6.5
7.5
Ω
Polar TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Features
International standard packages
Unclamped Inductive Switching
(UIS) rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
IXTA2R4N120P
IXTH2R4N120P
IXTP2R4N120P
V
DSS
= 1200V
I
D25
= 2.4A
R
DS(on) ≤
≤≤≤≤ 7.5Ω
Ω
Ω
Ω
Ω
Applications:
High Voltage Switched-mode and
resonant-mode power supplies
High Voltage Pulse Power Applications
High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
High Voltage DC-DC converters
High Voltage DC-AC inverters
G
S
(TAB)
TO-263 (I
XTA)
TO-220 (I
XTP)
D
(TAB)
G
S
TO-247 (IXTH)
G
D S
(TAB)
G = Gate
D = Drain
S = Source
TAB = Drain


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