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IXTP2R4N120P Datasheet(PDF) 1 Page - IXYS Corporation |
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IXTP2R4N120P Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 4 page ![]() © 2008 IXYS CORPORATION, All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 1200 V V DGR T J = 25 °C to 150°C, R GS = 1MΩ 1200 V V GSS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25°C 2.4 A I DM T C = 25°C, pulse width limited by TJM 6A I A T C = 25°C 2.4 A E AS T C = 25°C 200 mJ dV/dt I S ≤ I DM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns P D T C = 25°C 125 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6mm (0.062) from case for 10s 300 °C T SOLD Plastic body for 10s 260 °C M d Mounting torque (TO-220, TO-247) 1.13 / 10 Nm/lb.in. Weight TO-263 2.5 g TO-220 3.0 g TO-247 6.0 g DS99873A (04/08) Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 250μA 1200 V V GS(th) V DS = VGS, ID = 250μA 2.5 4.5 V I GSS V GS = ±20V, VDS = 0V ±50 nA I DSS V DS = VDSS 5 μA V GS = 0V T J = 125°C 300 μA R DS(on) V GS = 10V, ID = 0.5 • ID25, Note 1 6.5 7.5 Ω Polar TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P V DSS = 1200V I D25 = 2.4A R DS(on) ≤ ≤≤≤≤ 7.5Ω Ω Ω Ω Ω Applications: High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters G S (TAB) TO-263 (I XTA) TO-220 (I XTP) D (TAB) G S TO-247 (IXTH) G D S (TAB) G = Gate D = Drain S = Source TAB = Drain |
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