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IXTH68P20T Datasheet(PDF) 4 Page - IXYS Corporation |
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IXTH68P20T Datasheet(HTML) 4 Page - IXYS Corporation |
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4 / 6 page ![]() IXTT68P20T IXTH68P20T IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 7. Input Admittance -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 -5.5 -5 -4.5 -4 -3.5 -3 VGS - Volts TJ = 125ºC 25ºC - 40ºC Fig. 8. Transconductance 0 20 40 60 80 100 120 140 160 180 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 ID - Amperes TJ = - 40ºC 25ºC 125ºC Fig. 9. Forward Voltage Drop of Intrinsic Diode -220 -200 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 -1.3 -1.2 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 VSD - Volts TJ = 125ºC TJ = 25ºC Fig. 10. Gate Charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 50 100 150 200 250 300 350 400 QG - NanoCoulombs VDS = -100V I D = - 34A I G = -1mA Fig. 11. Capacitance 100 1,000 10,000 100,000 -40 -35 -30 -25 -20 -15 -10 -5 0 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 12. Forward-Bias Safe Operating Area 1 10 100 1000 1 10 100 1000 VDS - Volts TJ = 150ºC TC = 25ºC Single Pulse 1ms 100µs RDS(on) Limit 10ms DC - - -- - - - - 100ms 25µs |
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