STD2LN60K3 datasheet(3/20 Pages) STMICROELECTRONICS

3 / 20 page

STD2LN60K3, STF2LN60K3, STU2LN60K3

Electrical ratings

Doc ID 023500 Rev 1

3/20

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

DPAK

TO-220FP

IPAK

VDS

Drain-source voltage

600

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

2 (1)

Limited by package

Drain current (continuous) at TC = 100 °C

1.26

1.26 (1)

1.26

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

8 (1)

PTOT

Total dissipation at TC = 25 °C

Derating factor

0.36

0.16

0.36

W/°C

VESD(G-S)

Gate source ESD

(HBM-C = 100 pF, R = 1.5 k

Ω)

2500

dv/dt (3)

ISD ≤ 2 A, di/dt ≤ 400 A/µs, peak VDS < V(BR)DSS

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

Tstg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

DPAK

TO-220FP

IPAK

Rthj-case Thermal resistance junction-case max

2.78

6.25

2.78

°C/W

Rthj-pcb

Thermal resistance junction-pcb max

°C/W

Rthj-amb Thermal resistance junction-amb max

62.5

100

°C/W

Table 4.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

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