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G6262 Datasheet(PDF) 2 Page - Hamamatsu Corporation |
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G6262 Datasheet(HTML) 2 Page - Hamamatsu Corporation |
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2 / 4 page ![]() GaAsP photodiode Diffusion type 0 0.1 0.2 0.3 0.4 0.5 200 400 600 WAVELENGTH (nm) 800 (Typ. Ta=25 ˚C) G5645 G7189 G6262 0 0.02 0.04 0.06 0.08 0.1 200 300 400 WAVELENGTH (nm) 500 (Typ. Ta=25 ˚C) G5842 WAVELENGTH (nm) (Typ.) 400 200 -0.5 0 +0.5 +3.0 +2.5 +2.0 +1.5 +1.0 600 800 LOAD RESISTANCE ( Ω) (Typ. Ta=25 ˚C, VR=0 V) 10 3 10 4 10 2 100 ns 1 µs 10 ms 1 ms 100 µs 10 µs 10 5 10 6 REVERSE VOLTAGE (V) (Typ. Ta=25 ˚C, VR=0 V) 0.01 0.1 0.001 100 fA 1 pA 100 pA 10 pA 110 AMBIENT TEMPERATURE (˚C) (Typ. VR=10 mV) 020 -20 10 M Ω 1 G Ω 100 M Ω 10 T Ω 1 T Ω 100 G Ω 10 G Ω 40 60 80 s s s s s Spectral response KGPDB0029EA KGPDB0001EC s s s s s Photo sensitivity temperature characteristic KGPDB0030EA s s s s s Rise time vs. load resistance KGPDB0031EA s s s s s Dark current vs. reverse voltage KGPDB0032EA s s s s s Shunt resistance vs. ambient temperature KGPDB0033EA |
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