2SC2545 datasheet(3/8 Pages) HITACHI

3 / 8 page

2SC2545, 2SC2546, 2SC2547

Electrical Characteristics (Ta = 25°C)

2SC2545

2SC2546

2SC2547

Item

Symbol Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Unit

Test conditions

Collector to base

breakdown voltage

(BR)CBO

—

120

—

C = 10 µA, IE = 0

Collector to emitter

breakdown voltage

(BR)CEO

—

120

—

C = 1 mA,

BE = ∞

Emitter to base

breakdown voltage

(BR)EBO

5—

—

5—

—

E = 10 µA, IC = 0

Collector cutoff current

CBO

—

0.1

—

0.1

—

0.1

µAV

CB = 50 V, IE = 0

Emitter cutoff current

EBO

—

0.1

—

0.1

—

0.1

µAV

EB = 2 V, IC = 0

DC current transfer ratio

FE*

250

—

1200 250

—

1200

250

—

800

CE = 12 V,

C = 2 mA

Collector to emitter

saturation voltage

CE(sat)

—

0.2

—

0.2

—

0.2

C = 10 mA,

B = 1 mA

Base to emitter voltage

—

0.6

—

0.6

—

0.6

—

CE = 12 V,

C = 2 mA

Gain bandwidth product f

—90

—

—90

—

—90

—

MHz V

CE = 12 V,

C = 2 mA

Collector output

capacitance

Cob

—

3.0

—

3.0

—

3.0

—

CB = 10 V, IE = 0,

f = 1 MHz

Noise voltage referred

input

—

0.5

—

0.5

—

0.5

—

nV/

√Hz

CE = 6V,

C = 10 mA,

f = 1 kHz,

g = 0, ∆f = 1Hz

Note:

1. The 2SC2545, 2SC2546 and 2SC2547 are grouped by h

FE as follows.

2SC2545, 2SC2546

250 to 500

400 to 800

600 to 1200

2SC2547

250 to 500

400 to 800

—

2SC2545 Datasheet(PDF) 3 Page - Hitachi Semiconductor

2SC2545 Datasheet(HTML) 3 Page - Hitachi Semiconductor

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL