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2SC4050 Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part # 2SC4050
Description  Silicon NPN Epitaxial
PDF  6 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC4050 Datasheet(HTML) 2 Page - Hitachi Semiconductor

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2SC4050
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
120
V
Collector to emitter voltage
V
CEO
120
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
100
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
120
—
—
V
I
C = 10 µA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
120
—
—
V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5
——V
I
E = 10 µA, IC = 0
Collector cutoff current
I
CBO
—
—
0.1
µAV
CB = 70 V, IE = 0
Emitter cutoff current
I
EBO
—
—
0.1
µAV
EB = 2 V, IC = 0
DC current transfer ratio
h
FE*
1
250
—
800
V
CE = 12 V, IC = 2 mA*
2
Collector to emitter saturation
voltage
V
CE(sat)
—
—
0.1
V
I
C = 10 mA, IB = 1 mA*
2
Base to emitter saturation
voltage
V
BE(sat)
—
—
1.1
V
I
C = 10 mA, IB = 1 mA*
2
Notes: 1. The 2SC4050 is grouped by h
FE as follows.
2. Pluse test
Grade
D
E
Mark
KID
KIE
h
FE
250 to 500
400 to 800



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