SIE812DF datasheet(3/10 Pages) VISHAY

3 / 10 page

Document Number: 74337

S09-1337-Rev. B, 13-Jul-09

www.vishay.com

Vishay Siliconix

SiE812DF

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

100

0.0

0.1

0.2

0.3

0.4

0.5

VGS = 10 V thru 6 V

3 V

VDS - Drain-to-Source Voltage (V)

4 V

5 V

0.0020

0.0022

0.0024

0.0026

0.0028

0.0030

20406080

100

VGS = 10 V

ID - Drain Current (A)

VGS = 4.5 V

20406080

100

120

ID = 25 A

Qg - Total Gate Charge (nC)

VDS = 32 V

VDS = 20 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

012

TC = 125 °C

25 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

2000

4000

6000

8000

10 000

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

100

125

150

VGS = 10 V, 4.5 V

ID = 25 A

TJ - Junction Temperature (°C)

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