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ST9435GP Datasheet(PDF) 2 Page - Stanson Technology

Part # ST9435GP
Description  P Channel Enhancement Mode MOSFET
PDF  6 Pages
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Manufacturer  STANSON [Stanson Technology]
Direct Link  http://www.stansontech.com
Logo STANSON - Stanson Technology

ST9435GP Datasheet(HTML) 2 Page - Stanson Technology

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ST9435GP
P Channel Enhancement Mode MOSFET
-15.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST9435GP 2010. V1
ELECTRICAL CHARACTERISTICS
( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Static
Drain-Source
Breakdown Voltage
V(BR)DSS
VGS=0V,ID=-250mA
-30
V
Gate Threshold
Voltage
VGS(th)
VDS=VGS,ID=-250uA
-1.0
-3.0
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±100
nA
Zero Gate Voltage
Drain Current
IDSS
VDS=-24V,VGS=0V
-1
uA
VDS=-24V,VGS=0V
TJ=125℃
-250
Drain-source On-
Resistance
RDS(on)
VGS=-10V,ID=-10A
VGS=-4.5V,ID=-5A
50
80
57
88
m
Forward
Transconductance
gfs
VDS=-10V,ID=-10A
10
S
Diode Forward Voltage
VSD
IS=-10A,VGS=0V
-1.2
V
Dynamic
Total Gate Charge
Qg
VDS=-24V
VGS=-4.5V
ID≡-10A
9
16
nC
Gate-Source Charge
Qgs
1.6
Gate-Drain Charge
Qgd
4.3
Input Capacitance
Ciss
VDS =-25V
VGS=0V
F=1MHz
575
750
pF
Output Capacitance
Coss
80
Reverse
TransferCapacitance
Crss
75
Turn-On Time
td(on)
tr
VDS=-15V,RG= 3.3
ID=-10A,VGS=-10V
RD=1.5
6.8
nS
46
Turn-Off Time
td(off)
tf
20
7



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