STP4189D

P Channel Enhancement Mode MOSFET

-

12.0A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

Copyright © 2009, Stanson Corp.

STP4189D 2009. V1

ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

VDSS

-40

V

Gate-Source Voltage

VGSS

±20

V

Pulsed Drain Current

IDM

-50

A

Continuous Source Current (Diode Conduction)

IS

-20

A

Power Dissipation

TA=25℃

TA=70℃

PD

52.5

31

W

Operation Junction Temperature

TJ

150

℃

Storgae Temperature Range

TSTG

-55/150

℃

Thermal Resistance-Junction to Ambient

RθJA

50

℃/W