Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

40

mS

C

iss

133

pF

C

oss

V

24

pF

C

rss

6.6

pF

t

d(on)

15

ns

t

r

V

137

ns

t

d(off)

V

11

ns

t

f

131

ns

Q

g(on)

7.5

nC

Q

gs

V

2.2

nC

Q

gd

3.0

nC

∆∆∆∆∆I

∆∆∆∆T

Plateau Current Shift V

±50

ppm/K

with Temperature

∆∆∆∆∆V

∆∆∆∆ I

125

k

Ω

V

F

I

1.8

V

R

thJC

3.1

K/W

R

thCA

TO-220

80

K/W

TO-251/252

100

K/W

IXCP 01N90E

IXCY 01N90E

TO-252 AA Outline

Dim.

Millimeter

Inches

Min.

Max.Min.

Max.

A

2.19 2.38

0.086

0.094

A1

0.89 1.14

0.035

0.045

A2

0 0.13

0

0.005

b

0.64 0.89

0.025

0.035

b1

0.76 1.14

0.030

0.045

b2

5.21 5.46

0.205

0.215

c

0.46 0.58

0.018

0.023

c1

0.46 0.58

0.018

0.023

D

5.97 6.22

0.235

0.245

D1

4.32 5.21

0.170

0.205

E

6.35 6.73

0.250

0.265

E1

4.32 5.21

0.170

0.205

e

2.28 BSC

0.090 BSC

e1

4.57 BSC

0.180 BSC

H

9.40 10.42

0.370

0.410

L

0.51 1.02

0.020

0.040

L1

0.64 1.02

0.025

0.040

L2

0.89 1.27

0.035

0.050

L3

2.54 2.92

0.100

0.115

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

Pins: 1 - Gate

2 - Drain

3 - Source

4 - Drain

Bottom Side

TO-220 AB Dimensions