IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106

5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796

5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= I

9

13

S

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

C

ies

1450

pF

C

oes

V

130

pF

C

res

37

pF

Q

g

41

nC

Q

ge

I

18

nC

Q

gc

18

nC

t

d(on)

50

n s

t

ri

50

n s

t

d(off)

150

250

ns

t

fi

170

300

ns

E

off

1.3

2.6

mJ

t

d(on)

55

n s

t

ri

75

ns

E

on

1.2

mJ

t

d(off)

190

n s

t

fi

280

ns

E

off

2.4

mJ

R

thJC

0.83 K/W

R

thCK

0.25

K/W

Inductive load, T

°°°°C

I

V

Inductive load, T

°°°°C

I

V

IXSP 24N60B

Pins: 1 - Gate

2 - Drain

3 - Source

4 - Drain

TO-220 Outline